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| DG458/459 Vishay Siliconix Fault-Protected Single 8-Ch/Differential 4-Ch Analog Multiplexers DESCRIPTION The DG458 and DG459 are 8-channel single-ended and 4-channel differential analog multiplexers, respectively, incorporating fault protection. A series n-p-n MOSFET structure provides device and signal-source protection in the event of power loss or overvoltages. Under fault conditions the multiplexer input (or output) appears as an open circuit and only a few nanoamperes of leakage current will flow. This protects not only the multiplexer and the circuitry following it, but also protects the sensors or signal sources which drive the multiplexer. The DG458 and DG459 can withstand continuous overvoltage inputs up to 35 V. All digital inputs have TTL compatible logic thresholds. Break-before-make operation prevents channel-to-channel interference. The DG458 and DG459 are improved pin-compatible replacements multiplexers. for HI-508A/509A and MAX358/359 FEATURES * Fault and Overvoltage Protection Pb-free * All Channels Off When Power Off * Latchup-Proof * Fast Switching - TA: 200 ns * Break-Before-Make Switching * Low On-Resistance: 180 * Low Power Consumption: 3 mW * TTL and CMOS Compatible Inputs Available RoHS* COMPLIANT BENEFITS * * * * * * Improved Ruggedness Power Loss Protection Prevents Adjacent Channel Crosstalk Standard Logic Interface Superior Accuracy Fast Settling Time APPLICATIONS * * * * * Data Acquisition Systems Industrial Process Control Systems Avionics Test Equipment High-Rel Control Systems Telemetry FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG458 Dual-In-Line A0 EN VS1 S2 S3 S4 D A1 A2 GND V+ S5 S6 S7 S8 A0 EN VS1a S2a S3a S4a Da 1 2 3 4 5 6 7 8 Decoders/Drivers DG459 Dual-In-Line 16 15 14 13 12 11 10 9 A1 GND V+ S1b S2b S3b S4b Db 1 2 3 4 5 6 7 8 Decoders/Drivers 16 15 14 13 12 11 10 9 Top View Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70064 S-71155-Rev. G, 11-Jun-07 www.vishay.com 1 DG458/459 Vishay Siliconix THRU TABLES AND ORDERING INFORMATION TRUTH TABLE - DG458 A2 X 0 0 0 0 1 1 1 1 A1 X 0 0 1 1 0 0 1 1 A0 X 0 1 0 1 0 1 0 1 EN 0 1 1 1 1 1 1 1 1 On Switch None 1 2 3 4 5 6 7 8 TRUTH TABLE - DG459 A1 X 0 0 1 1 A0 X 0 1 0 1 EN 0 1 1 1 1 On Switch None 1 2 3 4 Logic "0" = VAL 0.8 V Logic "1" = VAH 2.4 V X = Don't Care ORDERING INFORMATION Temp Range Package Part Number DG458DJ DG458DJ-E3 - 40 to 85 C 16-Pin Plastic DIP DG459DJ DG459DJ-E3 ABSOLUTE MAXIMUM RATINGS Parameter V+ to VV+ to GND V- to GND VEN, VA Digital Input VS, Analog Input Overvoltage with Power On VS, Analog Input Overvoltage with Power Off Continuous Current, S or D Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max) Storage Temperature (AK Suffix) (DJ Suffix) 16-Pin Plastic DIPB Power Dissipation (Package) a Limit 44 22 - 25 (V-) - 4 to (V+) + 4 (V-) - 20 to (V+) + 20 - 35 to + 35 20 40 - 65 to 150 - 65 to 125 600 1000 1000 Unit V mA C 16-Pin CerDIPC LCC-20 d mW Notes: a. All leads soldered or welded to PC board. b. Derate 6.3 mW/C above 75 C. c. Derate 12 mW/C above 75 C. d. Derate 10 mW/C above 75 C. www.vishay.com 2 Document Number: 70064 S-71155-Rev. G, 11-Jun-07 DG458/459 Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VAL = 0.8 V, VAH = 2.4 Vf A Suffix - 55 to 125 C Tempb Full VD = 9.5 V, IS = - 400 A VD = 5 V, IS = - 400 A rDS(on) IS(off) VD = 0 V, IS = - 400 A VEN = 0 V, VD = 10 V VS = 10 V VEN = 0 V VD = 10 V VS = 10 V DG459 Only DG458 Drain On Leakage Current Fault Output Leakage Current (with Overvoltage) Input Leakage Current (with Overvoltage) Input Leakage Current (with Power Supplies Off) Digital Control Input Low Threshold Input Low Threshold Logic Input Control VAl VAL IA VA = 2.4 V or 0.8 V Full Full Full 2.4 -1 1 0.8 2.4 -1 1 0.8 V A ID(off) VS = 33 V, VD = 0 V See Figure 1 VS = 25 V, VD = 10 V, See Figure 1 VS = 25 V, VSUPS = 0 V VD = A0, A1, A2, EN = 0 V Room Room Room 0.02 0.005 0.001 -5 -2 5 2 - 10 -5 10 A 5 nA ID(on) VS = VD = 10 V DG459 DG458 DG459 Room Full Room Room Room Full Room Full Room Full Room Room Full Room Full 0.1 0.05 0.45 180 6 0.03 0.1 0.1 - 0.5 - 50 -1 - 200 -1 - 100 - 50 -2 - 200 -2 - 100 0.5 50 1 200 1 100 50 2 200 2 100 -1 - 20 -1 - 50 -2 - 25 - 20 -5 - 50 -5 - 25 1 20 1 50 2 25 20 5 50 5 25 Typc Mind - 10 Maxd 10 1.2 1.5 400 D Suffix - 40 to 85 C Mind - 10 Maxd 10 1.5 1.8 400 Unit V k % Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance rDS(on) Matching Between Channelsh Source Off Leakage Current Symbol VANALOG rDS(on) Drain Off Leakage Current Differential Off Drain Leakage Current ID(off) nA IDIFF IS(off) Document Number: 70064 S-71155-Rev. G, 11-Jun-07 www.vishay.com 3 DG458/459 Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VAL = 0.8 V, VAH = 2.4 Vf See Figure 3 See Figure 4 See Figure 5 Enable Turn-Off Time Settling Time tOFF(EN) ts To 0.1 % To 0.01 % VEN = 0 V, RL = 1 k CL = 15 pF, VS = 3 VRMS f = 100 kHz f = 1 MHz DG458 DG459 DG458 DG459 A Suffix - 55 to 125 C Tempb Room Room Room Full Room Full Room Room Room Room Room Room Room Room Room Room Full Room Full Room Typc 200 45 140 50 0.5 1.5 90 5 5 15 10 40 35 0.05 - 0.01 - 0.1 - 0.2 4.5 18 0.1 0.2 - 0.1 - 0.2 4.5 18 0.1 0.2 pF 10 250 500 250 500 Mind Maxd 500 10 250 500 250 500 ns D Suffix - 40 to 85 C Mind Maxd 500 Unit Parameter Dynamic Characteristics Transition Time Break-Before-Make Interval Enable Turn-On Time Symbol tA tOPEN tON(EN) s Off Isolation Logic Input Capacitance Source Off Capacitance Drain Off Capacitance Drain On Capacitance Power Supplies Positive Supply Current Negative Supply Current Power Supply Range for Continuous Operation OIRR Cin CS(off) CD(off) CD(on) dB I+ VEN = 5.0 or 0 V, VA = 0 V I- mA V Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. When the analog signal exceeds the + 13.5 V or - 12 V, rDS(on) starts to rise until only leakage currents flow. rDS(on) MAX - rDS(on) MIN x 100 % h. rDS(on) = rDS(on) AVE ( ) Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70064 S-71155-Rev. G, 11-Jun-07 DG458/459 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 mA r DS(on) - Drain-Source On-Resistance () 100 A 10 A I S - Source Current 1 A 100 nA 10 nA Operating Range 1 nA 100 pA 10 pA 1 pA - 50 - 40 - 30 - 20 - 10 V+ = V- = 0 V 700 600 500 400 85 C 300 200 100 0 0 10 20 30 40 50 - 10 - 7.5 - 5.0 - 2.5 0 2.5 5.0 7.5 10 VD - Drain Voltage (V) 25 C 0 C 125 C V+ = 15 V V- = - 15 V - 55 C VS - Source Voltage (V) Input Leakage vs. Input Voltage 1 mA 100 A 10 A I S - Source Current 1 A 100 nA 10 nA Operating Range 1 nA 100 pA 10 pA 1 pA - 50 - 40 - 30 - 20 - 10 0.01 0 10 20 30 40 50 0.10 I S, I D (nA) 1 V+ = 15 V V- = - 15 V 10 rDS(on) vs. VD and Temperature V+ = 15 V V- = - 15 V VS, VD = 10 V ID(on) ID(off) IS(off) - 55 - 35 - 15 5 25 45 65 85 105 125 VS - Source Voltage (V) Temperature (C) Off-Channel Leakage Currents vs. Input Voltage 1 nA r DS(on) Drain-Source On-Resistance () V+ = 15 V V- = - 15 V 100 pA I D - Drain Current 2000 Leakage Currents vs. Temperature 1600 5V Supplies 10 V 800 15 V 1200 10 pA 1 pA 400 20 V 0 - 20 0.1 pA - 50 - 40 - 30 - 20 - 10 0 10 20 30 40 50 - 15 - 10 -5 0 5 10 15 20 25 VS - Source Voltage (V) VS - Source Voltage (V) Output Leakage vs. Off-Channel Overvoltage rDS(on) vs. Input Voltage Document Number: 70064 S-71155-Rev. G, 11-Jun-07 www.vishay.com 5 DG458/459 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 20 15 I S, I D - Leakage (pA) 10 5 0 -5 - 10 - 15 - 20 - 25 - 15 - 12 - 9 -6 -3 1 3 6 9 12 15 VD or VS - Drain or Source Voltage (V) - 50 10 k 100 k 1M 10 M ID(on) - 70 Crosstalk ID(off) (dB) - 80 Off Isolation V+ = 15 V V- = - 15 V IS(off) - 100 - 110 V+ = 15 V V- = - 15 V RL = 1 k - 90 - 60 f - Frequency (Hz) Leakage Current vs. VS, VD 240 tTRANS 200 Charge Injection (pC) 0 Off Isolation and XTALK vs. Frequency - 10 V+ = 15 V V- = - 15 V - 20 Time (ns) 160 tON(EN) 120 VIN = 2 V 80 tOFF(EN) 40 5 10 15 20 V+, V- - Positive and Negative Supplies (V) - 30 CL = 1 nF - 40 - 50 CL = 10 nF - 60 - 10 -5 0 VS - Source Voltage (V) 5 10 Switching Times (tTRANS, tON, tOFF) vs. VSUPPLIES 280 240 200 Time (ns) 160 120 tOPEN 80 40 0 - 55 - 35 - 15 5 25 45 65 85 105 125 Temperature (C) tOFF(EN) 0.5 V+ = 15 V V- = - 15 V tTRANS V TH (V) tON(EN) 3.0 2.5 QINJ vs. VS 2.0 1.5 1.0 0 2.5 5 7.5 10 12.5 15 17.5 20 V+, Supply (V) Switching Times vs. Temperature Logic Input Switching Threshold vs. VSUPPLIES www.vishay.com 6 Document Number: 70064 S-71155-Rev. G, 11-Jun-07 DG458/459 Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ GND VREF D V- V+ A0 VV+ AX VV+ EN Level Shift Decode/ Drive S1 Sn V- TEST CIRCUITS + 15 V V+ IS(off) VS A Sn D ID(off) A V- VD - 15 V Figure 2. Analog Input Overvoltage + 15 V + 2.4 V EN A2 A1 A0 GND 50 - 15 V V1 M 35 pF V+ Logic Input 3V 50 % 0V 5V VO Switch Output VO +5V 90 % -5V tA S1b * 5V DG458 S8b Db * = S1a - S 8a, S2b - S 7b, Da Figure 3. Transition Time Document Number: 70064 S-71155-Rev. G, 11-Jun-07 www.vishay.com 7 DG458/459 Vishay Siliconix TEST CIRCUITS + 15 V V+ Logic Input 3V 0V + 2.4 V EN S1 , S8 S2 - S 7 +5V A0 A1 A2 GND 50 DG458 Db, D V1 k 35 pF VO Switch Output VO 0V tOPEN 50 % - 15 V Figure 4. Break-Before-Make Time + 15 V V+ S1 EN A0 A1 A2 GND 50 - 15 V VS2 - S 8 +5V Enable Input 3V 50 % 0V VS DG458 D 1 k VO 35 pF Switch Output VO 0V tON(EN) 90 % tOF Figure 5. Enable Delay www.vishay.com 8 Document Number: 70064 S-71155-Rev. G, 11-Jun-07 DG458/459 Vishay Siliconix DETAILED DESCRIPTION The Vishay Siliconix DG458 and DG459 multiplexers are fully fault- and overvoltage-protected for continuous input voltages up to 35 V whether or not voltage is applied to the power supply pins (V+, V-). These multiplexers are built on a high-voltage junction-isolated silicon-gate CMOS process. Two n-channel and one p-channel MOSFETs are connected in series to form each channel (Figure 1). Within the normal analog signal range ( 10 V), the rDS(on) variation as a function of analog signal voltage is comparable to that of the classic parallel N-MOS and P-MOS switches. When the analog signal approaches or exceeds either supply rail, even for an on-channel, one of the three series MOSFETs gets cut-off, providing inherent protection against overvoltages even if the multiplexer power supply voltages are lost. This protection is good up to the breakdown voltage of the respective series MOSFETs. Under fault conditions only sub microamp leakage currents can flow in or out of the multiplexer. This not only provides protection for the multiplexer and succeeding circuitry, but it allows normal, undisturbed operation of all other channels. Additionally, in case of power loss to the multiplexer, the loading caused on the transducers and signal sources is insignificant, therefore redundant multiplexers can be used on critical applications such as telemetry and avionics. - 35 V Overvoltage Q1 - 35 V S D S Q2 D S Q3 D + 35 V Overvoltage n-Channel MOSFET is Off n-Channel MOSFET is On G G G p-Channel MOSFET is Off (a) Overvoltage with Multiplexer Power Off - 15 V + 15 V - 15 V - 35 V Overvoltage Q1 Q2 Q3 + 35 V Overvoltage n-Channel MOSFET is On - 15 V p-Channel MOSFET is Off + 15 V n-Channel MOSFET is Off (b) Overvoltage with Multiplexer Power On Figure 5. Overvoltage Protection Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70064. Document Number: 70064 S-71155-Rev. G, 11-Jun-07 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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